Earlier at the Snapdragon Technology Summit in New York, SoC manufacturer Qualcomm announced the successor to their top-tier chipset series, the Snapdragon 835. Qualcomm also unveiled details on Quick Charge 4, the fourth iteration of their proprietary charging technology.
Replacing Snapdragon 820 and 821 as the cream of the crop offering, the Snapdragon 835 will be built on Samsung’s 10nm FinFET manufacturing process, which “allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption.”
Qualcomm isn’t ready to detail the specifics on the upcoming Snapdragon 835, so we’ll have to wait a while longer for more information.
As for Qualcomm’s Quick Charge 4, the new version boasts up to 20% faster charging and 30% higher efficiency than the previous generation Quick Charge 3 found in Snapdragon 820/821-bearing handsets.
Aside from the usual efficiency and safety enhancements, Quick Charge 4 also features USB Type-C and USB Power Delivery (USB-PD) compliance.
